Photocurrent spectroscopy of indirect transitions in Ge/Si multilayer quantum dots at room temperatureKONDRATENKO, S. V; GOLOVINSKIY, S. L; VAKULENKO, O. V et al.Surface science. 2007, Vol 601, Num 10, issn 0039-6028, L45-L48Article

Modification of n-Si( 111) wafer with olefin carboxyl acids and olefin sulfite acids and the photovoltaic properties of the electrodesXU, Q. H; ZHAO, Y. X; HUANG, F et al.Surface science. 2007, Vol 601, Num 7, pp 1709-1715, issn 0039-6028, 7 p.Article

Non-linear effects on the power dependent photocurrent of self-assembled InAs/GaAs quantum dotsMONTE, A. F. G; FINLEY, J. J; WHITTAKER, D. M et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 667-669, issn 0959-8324, 3 p.Conference Paper

Photocurrent theory based on coordinate dependent lifetimeULLRICH, Bruno; HAOWEN XI.Optics letters. 2010, Vol 35, Num 23, pp 3910-3912, issn 0146-9592, 3 p.Article

Evaluation of a biohybrid photoelectrochemical cell employing the purple bacterial reaction centre as a biosensor for herbicidesSWAINSBURY, David J. K; FRIEBE, Vincent M; FRESE, Raoul N et al.Biosensors & bioelectronics. 2014, Vol 58, pp 172-178, issn 0956-5663, 7 p.Article

Photocurrent decay transient process in a Si_1-xGe_x/Si superlatticeHUANG, X. L; JEONG, M. S; CHA, O. H et al.SPIE proceedings series. 1998, pp 313-320, isbn 0-8194-2726-8Conference Paper

In-situ synthesis, local structure, photoelectrochemical property of Fe-intercalated titanate nanotubeJUM SUK JANG; DONG HYUN KIM; SUN HEE CHOI et al.International journal of hydrogen energy. 2012, Vol 37, Num 15, pp 11081-11089, issn 0360-3199, 9 p.Article

The preparation of oxygenated fullerene film and its photoelectrical propertiesCHO, Wook; YANG, Sung-Chae.Surface & coatings technology. 2008, Vol 202, Num 22-23, pp 5333-5335, issn 0257-8972, 3 p.Conference Paper

Photodetectors with armchair graphene nanoribbons and asymmetric source and drain contactsOSTOVARI, Fatemeh; MORAVVEJ-FARSHI, Mohammad Kazem.Applied surface science. 2014, Vol 318, pp 108-112, issn 0169-4332, 5 p.Conference Paper

Investigation on optical absorption properties of electrochemically formed porous InP using photoelectric conversion devicesKUMAZAKI, Yusuke; KUDO, Tomohito; YATABE, Zenji et al.Applied surface science. 2013, Vol 279, pp 116-120, issn 0169-4332, 5 p.Article

The characteristic of photoelectric gas sensing to oxygen and water based on ZnO nanoribbons at room temperatureLIANG PENG; DEJUN WANG; MIN YANG et al.Applied surface science. 2008, Vol 254, Num 9, pp 2856-2860, issn 0169-4332, 5 p.Article

Influence of oxidation time on semiconductive behaviour of thermally grown oxide films on AISI 304LHAMADOU, L; KADRI, A; BOUGHRARA, D et al.Applied surface science. 2006, Vol 252, Num 12, pp 4209-4217, issn 0169-4332, 9 p.Article

Dye adsorption on TiO₂ electrodes studied using modulated photocurrent measurementsGHAMGOSAR, Pedram; HAGFELDT, Anders; BOSCHLOO, Gerrit et al.Thin solid films. 2014, Vol 560, pp 10-13, issn 0040-6090, 4 p.Conference Paper

Two-dimensional dopant profiling of silicon with submicron resolution using near field optics on silicon/electrolyte contactsDJEBBOURI, Mustapha; BERTIN, Francois; KESRI, Naziha et al.Applied surface science. 2008, Vol 254, Num 9, pp 2725-2729, issn 0169-4332, 5 p.Article

Photogalvanic in ultrathin film of topological insulatorQUAN SHENG WU; SHENG NAN ZHANG; ZHONG FANG et al.Physica. E, low-dimentional systems and nanostructures. 2012, Vol 44, Num 5, pp 895-899, issn 1386-9477, 5 p.Article

Recognition of defect structure of Si(A4) by on-line support vector machineDZIEDZIC, Tomasz; BEDKOWSKI, Janusz; JANKOWSKI, Stanisław et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 6937, pp 69371W.1-69371W.5, issn 0277-786X, isbn 978-0-8194-7124-6 0-8194-7124-0, 2Conference Paper

Electric field dependence of photocurrent absorption in GeSi/Si quantum wellsHUANG, S. H; ZHOU, H; JIANG, Z. M et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 136-141, issn 0167-9317, 6 p.Conference Paper

INHIBIT logic gate based on spiropyran sensitized semiconductor electrodeLEI LI; MENGXIAO YU; FU YOU LI et al.Colloids and surfaces. A, Physicochemical and engineering aspects. 2007, Vol 304, Num 1-3, pp 49-53, issn 0927-7757, 5 p.Article

A low light level sensor with dark current compensating pixelsPERLEY, Mitchell; BAXTER, Patrick; RAYNOR, Jeffrey M et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7100, pp 71002E.1-71002E.12, issn 0277-786X, isbn 978-0-8194-7330-1 0-8194-7330-8, 2Vol, 2Conference Paper

Digital balanced detection for fast optical computerized tomographyHAFIZ, Rehan; OZANYAN, Krikor B.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 63710C.1-63710C.8, issn 0277-786X, isbn 0-8194-6469-4, 1VolConference Paper

Design and applications of a family of optoelectronic photocurrent logical elements on the basis of current mirror and comparatorsKRASILENKO, Vladimir G; NIKOLSKY, Alexander I; LAZAREV, Alexander A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 59481G.1-59481G.9, issn 0277-786X, isbn 0-8194-5955-0, 2VolConference Paper

Imaging of charge collection properties of a CVD diamond detector using X-ray-induced current microscopyVITTONE, E; GIUDICE, A. Lo; PAOLINI, C et al.Diamond and related materials. 2002, Vol 11, Num 8, pp 1472-1478, issn 0925-9635Article

Photocurrent multiplication in amorphous Si/crystalline Si heterojunctionISHIDA, K; NAKAMURA, S; TOYAMA, T et al.Applied surface science. 1997, Vol 113114, pp 750-753, issn 0169-4332Conference Paper

Research on Phase Detection on Two-Dimensional Position Sensitive DetectorFENG XI; LAN QIN; LIAN XUE et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7658, issn 0277-786X, isbn 978-0-8194-8088-0, 76581D.1-76581D.5, 2Conference Paper

Demonstration of the quantum dot avalanche photodiode (QDAP)RAMIREZ, David A; JIAYI SHAO; HAYAT, Majeed M et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7320, issn 0277-786X, isbn 978-0-8194-7586-2 0-8194-7586-6, 1Vol, 73200L.1-73200L.7Conference Paper